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Etching System

Etching System

Bay-3 for Plasma Etch/Deposition Process

ICP.jpgInductively Coupled Plasma

Inductively Coupled Plasma is an etching technique where the gases are introduced above an Inductive coil, placed around a ceramic tube. RF is applied to both the coil, and chuck to create a plasma.
The substrate is placed on the RF powered chuck, and similar to RIE, the wafer takes on potential which accelerates etching species extracted from plasma toward the etched surface. Introducing different gases can create a chemical reaction. With this technique, etch profiles are typically anisotropic.
A DC bias measurement can be taken from the chuck which can give a good indication of the amount of etching that is occurring.
This technique is used for Deep Silicon etching, and is also known as a High Density Plasma source.

RIE.jpgPhantom III RIE

The Trion RIE Phantom Metal Etcher is designed to use chlorine based chemistry to etch metals from 4” wafers and 5” photomasks. Other substrates may also be capable of metal etching using the machine with slight modifications. The Trion metal etcher uses 7 gasses for chemistry: CHF3, SF6, CF4, O2, Cl2, BCl3, and Ar. Different gasses will be used for etching different materials. Observe the chart at the end of the SOP for approximate etch rates or the Trion metal etcher log located next to the machine for recent etch rates.

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The PECVD is equipped with a patented dual frequency generator, 500W at 187 kHz and 300W at 13.56 MHz, that allows for the deposition of low stress films. The sample plate can accommodate samples up to 250 mm in diameter, and has temperature control from 30ºC to 300ºC. The system is equipped with seven digital mass flow controllers with bypass and flush capabilities and up and downstream isolation valves.