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Deposition & Growth

Bay-1 Thin Film BAY

Metal and dielectric thin film deposition for the fabrication of microelectronic devices and MEMS devices.  Various metallic and metallic thin film can be processed in various thermal annealing conditions from few seconds to few tens of hours at above 1000°C.   Thermal oxidation process can also be done

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DC sputtering PVD75 System

The PVD 75 DC Sputtering is a thin film deposition system based on DC Sputtering technique. Conductive target materials can be sputter deposited in DC mode.

  • Target materials: Si, SiO2, Ti, Au, Ag,  (3 Target system)
  • Other materials can also be deposited upon request by a user and approved by the Material Review Board (MRB)
  • Deposition orientation: Sputtering Up
  • Substrate size: up to 150 mm
  • Substrate rotation: up to 20 rpm

 

 

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RF sputtering PVD75 System

The PVD 75 RF Sputtering is a thin film deposition system based on RF sputtering technique. The RF mode of sputter deposition is used to deposit thin layers of Insulator materials.

  • Target materials: Si, SiO2, Ti, Au, Ag, 
  • Other materials can also be deposited upon request by a user and approved by the Material Review Board (MRB)
  • Deposition orientation: Sputtering Up
  • Substrate size: up to 150 mm
  • Substrate rotation: up to 20 rpm

 

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E-beam Evaporation PVD75 System

Electron beam evaporation sources include components that evaporate the base material through the use of a high energy electron beam, generating very high deposition rates. The electron beam is focused onto the target material through the use of a magnetic field, and bombardment of the electrons generates enough heat to evaporate a wide range of materials with very high melting points.
Under regular e-beam evaporation, the chamber pressure is brought to as low a level as possible to prevent background gases from chemically reacting with the film or bulk evaporant. Under carefully controlled partial pressures of reactive gases, reactive e-beam evaporation can create films of a different chemical composition than that of the bulk material.
The basic configuration includes an electron beam source, hearth, and top cover, with accessory feedthroughs and power supply. Evaporation can be done directly from the hearth or with a crucible liner depending on the intended evaporation material. Because of the ability to control deposition rate, low contamination, excellent material utilization, and very high deposition rates, electron beam evaporation is a very adaptable technique used in many thin film deposition applications.

 

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Thermal Evaporator PVD75 System

Thermal evaporation sources typically centered on the substrate fixture have been moved to the outer edges of the fixture to allow for better uniformities. The fixtures allow a source adjustment of up to an inch to allow for optimization to a particular application.

  • Thermal Evaporation up to four 4" individual boats, or six 2" boat assemblies

 

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Electrical Furnaces

 

 

 

 

 

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RTP

 

 

 

 

 

 

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CVD System