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College of Science, Engineering, and Technology

Center for Materials Research

Research Faculty

Dr. Vladimir I. Gavrilenko

CMR Faculty-Dr. Vladimir I. Gavrilenko

Research Associate Professor

Ph.D., Electro-Optics, Physics, National University of Kiev, Ukraine
M.S., Physics, National University of Kiev, Ukraine

MCAR Suite #515, Norfolk State University,
700 Park Ave., Norfolk, VA 23504,
Phone: (757) 823-8052
Email: vgavrilenko@nsu.edu

Biography

Vladimir I. Gavrilenko is an associate research professor in the Center of Materials Research and in the department of physics of Norfolk State University, Norfolk VA. He obtained his MS degree in physics from National University of Kiev, Ukraine, PhD in electro-optics, and ScD (advanced doctoral degree) in computational optics of solid surfaces and interfaces from the National Academy of Science of Ukraine. He has combined academic (fundamental research and teaching) and industrial background (developing applications and hardware for optical diagnostics tools). Dr. Gavrilenko is working in the field of computational materials science including first principle studies of equilibrium atomic geometries, structural transformations, linear and non-linear optical properties of different solid, soft, and biological materials, physics and chemistry of surfaces and interfaces. In recent years he focused on electronic structure and optics of molecular-solid interfaces, different nano-structured materials containing metallic and non-metallic nanoparticles composed with organic and biological molecules. He is an author and co-author of more than 100 scientific publications including two books, and a patent, member of ACS, APS (life member), and MRS served as a member of organizing committees of several domestic and international conferences, professional panels, and meetings.

Synergistic Activities

  • NSF panel member, Division of material science
  • Member of the European Transnational Panel in Nano-science
  • Referral of Physical Review B, Physical Review Letters, and Physics Letters A
  • Member of American Chemical Society, American Physical Society (APS, life member) and of Materials Research Society (MRS)

Research

  • Computational Material Science
  • Quantum Chemistry
  • Nano-structured Materials
  • Quantum Confined Systems
  • Large-scale computations
  • Molecular Dynamics
  • Magneto-optics, non-linear optics (second harmonic generation, electro-optics)

Books/ Book Chapters

1 Gavrilenko V.I. Optics of Nanomaterials. Pan Standorf Publishing. 2011
2 Tutorials in Complex Photonic Media Gavrilenko V. I., Optics of Nanostructured Materials from First Principle Theories. Chapter 15 in: Tutorials in Complex Photonic Media, M. A. Noginov, G. Dewar, and N. I. Zheludev, Eds., SPIE Press Bellingham, WA, 479-524 (2009).


3 pdf Gavrilenko, A. V., Black S., Sykes A. C., Bonner C. E., and Gavrilenko V. I. Computations of Ground State and Excitation Energies of Poly(3-methoxy-thiophene) and Poly(thienylene vinylene) from First Principles. In: Lecture Notes in Computational Science, Ed. by M. Bubak et al., Springer-Verlag, Berlin Heidelberg, 2008, Part II, LNCS 5102, p.396; Book chapter.
4 pdf Noginov M. A., Zhu G., Gavrilenko V. I., Nonlinear Emission of Au Nanoparticles Enhanced by Rhodamine 6G Dye, In: Nonlinear Optics and Applications, Ed. by H. Abdeldayem and D. Frazier, Research Signpost (2007), p.233; Book chapter.
5 pdf Gavrilenko V. I. Ab initio Modeling of Optical Properties of Organic Molecules and Molecular Complexes. In: Lecture Notes in Computer Science. ICCS-2006, Part III. Ed. by V. N. Alexandrov et al. Springer (2006), p. 89
6 pdf Gavrilenko V. I., Grekhov A. M., Korbutjak D. V., and Litovchenko V. G. Optical Properties of Semiconductors. Handbook. Naukova Dumka, Kiev, 1987.
7 pdf Gavrilenko V. I. and Popov V. G. Ion Implantation in Semiconductor Technology. Znanie, Kiev 1984.
8 pdf Popov V.G. and Gavrilenko V.I. Laser Annealing in Integrated Electronics. (Znanie, Kiev, 1980), (Book).

Selected Publication

100 Gavrilenko A. V., Baker D., Gonder C., Gavrilenko V. I., Towards the Reduction of Optical Losses in Transition-Metal Based Nanomaterials, MRS Proceedings 2011, 1294, mrsf10-1294-m05-31 doi:10.1557/opl.2011.488
99 Gavrilenko A. V., McKinney C. S., Gavrilenko V. I. Effects of Molecular Adsorption on Optical Losses of Ag (111) Surface. Phys. Rev. B 82, 155246 (2010).
98 Bobb D. A., Zhu G., Mayy M., Gavrilenko A. V., Mead P., Gavrilenko V. I., Noginov M. A., Engineering of Low-Loss Metal for Nanoplasmonic and Metamaterials Applications, Appl. Phys. Lett. 95, 151102 (2009).
97 Gavrilenko, A. V., Matos T. D., Bonner C. E., Sun S.-S., Zhang C., and Gavrilenko V. I. Optical Absorption of Poly(thienylene vinilene)-Conjugated Polymers: Experiment and First Principle Theory. J. Phys. Chem. C, 112, 7908 (2008).
96 Gavrilenko V. I., Differential Reflectance and Second Harmonic Generation from Si-SiO2 Interface from First Principles. Phys. Rev. B, 77, 155311 (2008).
95 N. Noginova, J. McClure, E. Etheridge, V. I. Gavrilenko, and D. Novikov, Thermally and electrically induced switching in manganese doped perovskites. J. Phys. D: Appl. Phys. 41, 055411 (2008).
94 Zhu G., Mayy M., Bahoura M., Ritzo B. A., Gavrilenko H. V., Gavrilenko V. I., Noginov M. A., Elongation of Surface Plasmon Polariton Propagation Length without Gain, Optics Express, 16, 15576 (2008).
93 Gavrilenko A. V. , C. E. Bonner C. E., Gavrilenko V. I., Equilibrium Geometries, Reaction Pathways, and Electronic Structures of Ethanol Adsorbed on the Si (111) Surface
92 Zhu G., Mayy M., Bahoura M., Ritzo B. A., Gavrilenko V. I., Noginov M. A., En route to low loss nanoplasmonics: elongating surface plasmon propagating length without gain, Proceedings of SPIE Volume: 6638, Editor(s): Mikhail A. Noginov; Nikolay I. Zheludev; Allan D. Boardman; Nader Engheta (2007).
91 Zhu G., Gavrilenko V. I., Noginov M. A., Emission of Au Nanoparticles with and without Rhodamine 6G Dye, J. Chem. Phys., 127, 104503 (2007).
90 Noginov M. A., Zhu G., Gavrilenko V. I., Sensitized Nonlinear Emission of Gold Nanoparticles, Optics Express, 15, 15648 (2007).
89 Gavrilenko V. I. and Noginov M. A. Ab initio Study of Optical Properties of Rhodamine 6G Molecular Dimmers.J. Chem. Phys., 124, 44301-44306 (2006).
88 Kolasinski K. W., Harrison I., Gavrilenko A. V. , Bonner C. E. , Gavrilenko V. I., Characterization of Chemisorption on Porous Silicon by Sum Frequency Generation,Proc. SPIE, 6320, 63200Q (2006).
87 Bonner C. E., Jr., Charter S., Lorts A., Adebolu O. I., Zhang C., Sun S.-S., Gavrilenko V. I., Luminescence and Optical Absorption of Conjugated Poly-Phenylene-Vinylene Polymers, Proc. SPIE, 6320, 63200J (2006).
86 Noginov M. A., Vondrova M., Williams S. M., Bahoura M., Gavrilenko V. I., Black S. M., Drachev V. P., Shalaev V. M., Sykes A. Spectroscopic Studies of Liquid Solutions of R6G Laser Dye and Ag Nanoparticle Aggregates. J. Opt. A, 7, S219 (2005)
85 Noginova N. E., Chen F., Chelule G., Gavrilenko V. I. Optical and Transport Effects in LaGa1-xMnxO3: Experiment and Theory. Proc. Mat. Res. Soc., 2004, p.424.
84 Gavrilenko V. I.Ab initio Theory of Second Harmonic Generation of Si-SiO2. Bulletin of American Physical Society, 48, 2003, p 420.
83 Gavrilenko V. I. and Wu R. Q. Second Harmonic Generation of GaN (0001). Phys. Rev. B, 65, 35405 (2002).
82 Gavrilenko V.I. Ab initio Theory of Second Harmonic Generation from Semiconductor Surfaces and Interfaces. Invited. OSI-2001. Physica Status Solidi (a) 188, 1267 (2001)
81 Downer M. C., Jiang Y., Lim D., Mantese L., Wilson P. T., Mendoza B. S., and Gavrilenko V.I. Optical Second Harmonic Spectroscopy of Silicon Surfaces, Interfaces, and Nano-crystals. Invited. OSI-2001. Physica Status Solidi (a) 188, 1371 (2001)
80 Gavrilenko V. I. and Wu R. Q. Magnetostriction and Magnetism of Rare Earth Intermetallic Compounds: First Principle Study. J. Appl. Phys., 89, 7320 (2001).
79 Downer M. C., Mendoza B. S., and Gavrilenko V. I.Optical Second Harmonic Spectroscopy of Semiconductor Surfaces: Advances in Microscopic Understanding. Review. Surface and Interface Analysis. 31, 966 (2001).
78 Gavrilenko V. I., Wu R. Q., Downer M. C., Ekerdt J. G., Lim D., and Parkinson P. Optical Second Harmonic Spectra of Si(001) with H and Ge adatoms: First Principles Theory and Experiment. Phys. Rev. B 63, 165325 (2001).
77 Lim D., Downer M. C., Ekerdt J. G., Arzate N., Mendoza B. S., Gavrilenko V. I., Wu R. Q.,Optical Spectroscopy of Boron-Reconstructed Si(001). Phys. Rev. Lett. 84, 3406 (2000).
76 Gavrilenko V. I. and Wu R. Q.Linear and Non-Linear Optical Properties of Group-III Nitrides. Phys. Rev. B, 61, 2632 (2000).
75 Gavrilenko V. I. and Wu R. Q. Energy Loss Spectra of Group III Nitrides, Appl. Phys. Lett. 77, 3042 (2000).
74 Gavrilenko V. G., Wu R. Q., Downer M. C., Ekerdt J. G., Lim D., and Parkinson P. Optical Second Harmonic Spectra of Silicon- adatom Surfaces: Theory and Experiment. Thin Solid Films 364, 1 (2000).
73 Yang Z., Gavrilenko V. I., and Wu R. Q. First-Principle Study of the Atomic Structure and Magnetic Properties of Ultrathin Ni Films on Cu(001) Substrate. Surf. Sci., 447, 212 (2000).
72 Downer M. C., Ekerdt J. G., Lim D., Parkinson P., Gavrilenko V. I., Wu R. Q., Arzate N., and Mendoza B. S. Second Harmonic Spectroscopy of Si Surfaces with H, Ge, and B Adsorbates: Experiment and Theory. IEEE TOPS 46, 22 (2000).
71 Gavrilenko V. I. and Wu R. Q.Magneto-Optical Properties of FeAu Alloys and Fe/Au Superlattices.J. Appl. Phys., 85, 5112 (1999).
70 Gavrilenko V. I. and Wu R. Q. Effect of Cu Coverage on the Magnetic Anisotropy of Co/Cu(001).Phys. Rev. B, 60, 9539 (1999).
69 Freeman A. J., Wu R. Q., Kim M., and Gavrilenko V. I. Magnetism, Magneto-Crystalline Anisotropy, Magnetostriction and MOKE at Surfaces and Interfaces. Proceedings of the 1998 International Conference on Magnetism of Nano-structured Phases. J. Magnetism and Magnetic Materials 203, 1, (1999).
68 Gavrilenko V. I. and Pollak F. Surface-Induced Optical Anisotropy of the (001) and (113) Silicon Surfaces. Phys. Rev. B 58, 12964 (1998).
67 Gavrilenko V. I., and Bechstedt F. Theory of Reflectance Anisotropy of Clean and Hydrogenated (001) Diamond Surfaces. Phys. Rev. B 56, 3903 (1997).
66 Adolph B., Tenelsen K., Gavrilenko V. I., and Bechstedt F. Optical and Loss Spectra of SiC Polytypes from ab initio Calculations. Phys. Rev. B 55, 1422 (1997).
65 Gavrilenko V. I., and Bechstedt F. Optical Functions of Semiconductors beyond Density Functional Theory and Random Phase Approximation. Phys. Rev. B 55, 4343 (1997).
64 Gavrilenko V. I., and Bechstedt F. Local Field and Exchange Correlation Effects in Optical Spectra of Semiconductors. Phys. Rev. B 54, 13416 (1996).
63 Adolph B., Gavrilenko V. I., Tenelsen K., Bechstedt F., and Del Sole R. Nonlocality and Many-Body Effects in the Optical Properties of Semiconductors. Phys. Rev. B 53, 9797 (1996).
62 Adolph B., Tenelsen K., Gavrilenko V. I., and Bechstedt F. Ab initio Calculations of the Optical Properties of Semiconductors. Proceedings of 23d International Conference on Physics of Semiconductors, World Scientific, 1996, p. 313.
61 Gavrilenko V. I. and Rebentrost F. Nonlinear Optical Susceptibility of the Surfaces of Silicon and Diamond. Surf. Sci., 331-335, 1355 (1995).
60 Gavrilenko V. I. and Rebentrost F. Nonlinear Optical Susceptibility of the (111) and (001) Surfaces of Silicon. Appl. Phys. A 60, 143 (1995).
59 Gavrilenko V. I. and Koch F. Electronic Structure of Nanometer-Thickness Si(001) Film. J. Appl. Phys. 77, 3288 (1995).
58 Gavrilenko V. I. and Shkrebtii A. I. Anisotropy of Optical Reflectance of the (001) Surface of Diamond. Surf. Sci. 324, 226 (1995).
57 Gavrilenko V. I. Calculated Differential Reflectance of the (110) Surface of Cubic Silicon Carbide. Appl. Phys. Lett. 67, 16 (1995).
56 Gavrilenko V. I., Vogl P., and Koch F. Influence of Hydrogen Adsorption on the Electron Energy Structure and Densities of States of Si(001) Surface. Application to Porous Silicon. Proceedings of 4th International Conference on Formation of Semiconductor Interfaces. World Scientific, 1994, p.130
55 Gavrilenko V. I. Adsorption of Hydrogen on the (001) Surface of Diamond. Phys. Rev. B 47, 9556 (1993).
54 Gavrilenko V. I., Frolov S. I., and Klyui N. I. Electronic Band Structure and Optical Properties of Cubic Silicon Carbide Crystals. Physica B 185, 394 (1993).
53 Gavrilenko V. I. Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen. Proceedings of 17-th International Conference on Defects of Semiconductors, ICDS-17, Gmunden, Austria, 1993, p. 111
52 Gavrilenko V. I., Vogl P., and Koch F. Calculation of the Energy Spectrum of Nanometer Sized Silicon. Material Research Society Symposium Proceedings, 283, 1993, p.431.
51 Koch F., Petrova-Koch V., Muschik T., Kux A., Mueller F., Gavrilenko V. I., and Moeller F. Thermal Oxidation of Luminescent Porous Si and its Implications for the Mechanism of Light Emission. Proceedings of 21st International Conference on Physics of Semiconductors. World Scientific, 1992, p. 220.
50 Petrova-Koch V., Muschik T., Gavrilenko V. I., and Koch F.,. Ton the Mechanism of Light Emission from Porous Silicon. Proceedings of 21st International Conference on Physics of Semiconductors. World Scientific, 1992, p. 272.
49 Frolov S. I. and Gavrilenko V. I. Optical Properties of Carbon Films in Visible and Near-Infrared Optical Regions. Ukrainian Journal of Physics, 36, 510 (1991).
48 Gavrilenko V. I., Frolov S. I., and Litovchenko V. G. Optical Spectroscopy of Polycrystalline Materials: Theory and Experiment on Group IV Materials. In Polycrystalline Semiconductors II. Springer Proceeding in Physics, Vol. 54, 1991, p.379.
47 Trallero-Ginner C., Cantarero A., Cardona M., and Gavrilenko V. I. One-Phonon Resonant Raman Scattering in AlxGa1-xGa. Phys. Rev. B 42, 11875 (1990).
46 Gavrilenko V. I., Martines D., Cantarero A., Cardona M., and Trallero-Ginner C. Resonant First- and Second-Order Raman Scattering in AlSb. Phys. Rev. B 42, 11718 (1990).
45 Contarero A., Martinez D., Gavrilenko V. I., Cardona M., and Trallero-Ginner C. Resonant Raman Scattering by One and Two LO-Phonons in AlSb. Proc.20-th Int. Conf. Phys. Semicond., Thessaloniki, Greece (World Scientific) 1990, v.3,p.2025
44 Gavrilenko V. I., Postnikov A. V., Klyui N. I., and Litovchenko V. G. Energy Band Structure and Optical Properties of Wurtzite-Structure Silicon Carbide Crystals. Physica Status Solidi (b) 162, 477 (1990).
43 Brodin A. M., Valakh M. Ya., Gavrilenko V. I., Lisitsa M. P., Litvinchuk A. P., Litovchenko V. G., and Ploog K. Multiphonon Resonant Raman Scattering and Effects of Tunneling of Electronic Excitations in Short Period GaAs-AlAs Superlattices. JETP Lett. 51, 157 (1990).
42 Gavrilenko V. I., Frolov S. I., and Pidlisnyj E. V. Optical Properties of Graphite-Like Carbon Films. Thin Solid Films, 190, 255 (1990).
41 Gavrilenko V. I. and Frolov S. I. Band Structure and Optical Properties of Silicon Carbide. SPIE’s International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications. Aachen, Germany, SPIE, 1990
40 Gavrilenko V. I., Litovchenko V. G., and Frolov S. I. Optical Characterization of Poly- and Microcrystalline Semiconductors. 35. Intern. Sci., Meeting, Technical University of Ilmenau, Germany), 1990, p.77
39 Gavrilenko V. I. and Frolov S. I. Band Structure and Optical Properties of Silicon Carbide. SPIE’s International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications. Aachen, Germany, SPIE, 1990
38 Gavrilenko V. I., Humlicek J., Klyui N. I., and Litovchenko V. G. Electron Energy Structure and Optical Properties of Microcrystalline Silicon. Physica Status Solidi (b). 155, 723 (1989).
37 C. Trallero-Ginner, Gavrilenko V. I., and Cardona M. Resonant Raman Scattering by LO Phonons in AlxGa1-xAs ( 0.2 < x < 0.7 ): Exciton Broadening and Alloying Effects. Phys. Rev. B 40, 1238 (1989).
36 Gavrilenko V. I., Klyui N. I., Litovchenko V. G., and Romanyuk B. N. Investigation of Ion Implanted Silicon by Electroreflectance Spectroscopy. Physica Status Solidi (a), 112, 805 (1989)
35 Gavrilenko V. I., Trallero-Ginner C., Cardona M., and Bauser E. Deformation Potential LO-Phonon Raman Scattering Near the Eo-Gap in AlxGa1-xAs Alloy. Excitonic Effects. Solid State Communications. 67, 459, (1988).
34 Gavrilenko V. I., Klyui N. I., Litovchenko V. G., and Strelnitskii V. E. Characteristic Features of the Electronic Structure of Carbon Films. Physics Status Solidi (b) 145, 209 (1988).
33 Gavrilenko V. I., Klyui N. I., Litovchenko V. G., and Strelnitskii V. E. Electroreflectance of Amorphous Hydrogenated Carbon Films. Soviet Physics -Semiconductors 22, 1302 (1988).
32 Trallero-Ginner C., Gavrilenko V. I., and Cardona M. Deformation Potential Raman Scattering near the Eo-Gap in AlGaAs Alloy. Proceedings of XI-th International Conference on Raman Spectroscopy, London, 1988, p.333
31 Mueller B., Gavrilenko V.I., Klyui N.I., and Litovchenko V. G. Procedure for the Measurements of Grain-Sizes in Polycrystalline Silicon. Patent DD 256375 AJ. - May 4, 1988 (German Democratic Republic).
30 Gavrilenko V. I., Humlicek J., Garriga M., Klyui N. I., and Litovchenko V. G. Optical Properties and Electronic Structure of Microcrystalline and Amorphous Silicon. Proc 19-th Int. Conf. Phys. Semicond. (Warsaw, 1988) v.2, p.1653
29 Gavrilenko V. I. Electronic Structure and Optical Properties of Polycrystalline Cubic Semiconductors. Physica Status Solidi (b) 139, 457 (1987).
28 Gavrilenko V. I., Klyui N. I., Litovchenko V. G., Padalka V. G., and Strelnitskii V. E. Electron Energy Structure of Carbon Films. Soviet Physics - Solid State Physics 29, 3449 (1987).
27 Akimchenko I. P., Barmin Yu., V., Vavilov V. S., Zolotuchin I. V., Gavrilenko V. I., and Litovchenko V. G. Optical Properties of InP. Thin Solid Films, 138, 21 (1986).
26 Gavrilenko V. I., Grekhov A. M., Katrich G. A., and Litovchenko V. G. Structural Defect Analysis of Ion-Implanted Bulk and Amorphous Silicon using Optical and Photoelectron Spectroscopy. Proc. 7-th Int. Conf. Ion Implantation. (Vilnius, Lithuania, 1985) p.195.
25 Akimchenko I. P., Barmin Yu., V., Vavilov V. S., Gavrilenko V. I., Zolotuchin I. V., and Litovchenko V. G. Optical Properties and Structure of a-Si Films Separated from their Substrates. Soviet Physics - Semicond. 18, 1334 (1984).
24 Grekhov A. M., Gavrilenko V. I., and Litovchenko V. G. Modeling of Electron Structure of a-Si:H by Atomic Clusters. Reports of the Academy of Science of the USSR, 63, 211 (1984).
23 Gavrilenko V. G., Zuev V. A., Klyui N. I., Litovchenko V. G., and Fedotov V. G. Electroreflection of monoclinic ZnP2 Crystals. Soviet Physics - Semicond. 18, 1072 (1984).
22 Gavrilenko V. G., Gorban I.S., Klyui N. I., Litovchenko V. G., and Skirda A. S. Electroreflection of Silicon Carbide in Visible and near Infrared Parts of the Spectrum. Soviet Physics - Semicond., 18,791 (1984).
21 Grekhov A. M., Gavrilenko V. I., Klaptchenko G. M., and Tsyashchenko Yu. P. Statistical Cluster Model of Amorphous Hydrogenated Silicon. Ukrainian Journal of Physics, 29, 539 (1984).
20 Gavrilenko V. I., Zuev V. A., Kalandadze T. M., Litovchenko V. G., and Popov V. G.. Optical Characteristics of Implanted Silicon Films. USSR Universities Reports, Physics. 27, 40 (1984).
19 Gavrilenko V. I., Grekhov A. M., Katrich G.A., Klimov V. V., and Litovchenko V. G. Ultraviolet Photoelectron Spectroscopy of Amorphous Hydrogenated Silicon. Soviet Physics ?Semiconductors. 17, 1045 (1983).
18 Gavrilenko V. I., Zuev V. A., Kalandadze T. M., Litovchenko V. G., Popov V. G. Energy Band Structure of Surface Layers of Silicon Implanted Films. Soviet Physics - Surf. Sci., No13, 104 (1983).
17 Gavrilenko V. I., Litovchenko V. G., Popov V. G., Svechnikov S. V., and Utkin-Edin S. V. Study of Some Active Treatments on Characteristics of Hydrogenated Amorphous Silicon Surface. Soviet Physics - Surf. Sci. No 11,106 (1983).
16 Gavrilenko V. I., Grekhov A. M., Katrich G. A., Klimov V. V., and Litovchenko V. G.. Effect of Structural Disorder on Valence Electron Energies in Silicon. Soviet Physics - Semicond. , 9, 1321 (1983).
15 Gavrilenko V. I., Gorban I. S., Litovchenko V.G., and Skirda A.S. Electroreflection of Some Rombohedral Polytypes of Silicon Carbide. Soviet Physics -Semicond. 16, 109 (1982).
14 Gavrilenko V.I, Zuev V.A., and Litovchenko V.G. Influence of Near-the-Surface Located Disordered Layers on the Electroreflection Spectra of the Au-SiO2 -Si Structure with Tunnel-Thin Oxide. USSR Universities Reports, Physics, 25, 117 (1982).
13 Gavrilenko V.I., Litovchenko V.G., Popov V.G., and Romanyuk B.N. Laser Annealing of the Surface Layers of Semiconductors. Proc. 26-th Int. Sci. Meeting. (Technical University Ilmenau, Germany, 1981), p.71.
12 Gavrilenko V.I., Zuev V.A., Ivanijchuk M.T., Korbutyak D.V., and Litovchenko V.G. Electroreflection Spectra of Intercalated GaSe Crystals. Soviet Physics - Solid State, 23, 511 (1981).
11 Litovchenko V.G., Zuev V.A., Korbutyak D.V., and Gavrilenko V.I. Optical and Luminescent Properties of Ion-Implanted Films. Thin Solid Films, 66, 255 (1980).
10  
9 Gavrilenko V.I. and Ruban M.A. Low-Frequency Lock-in Amplifier. Soviet Physics. - Instruments and Experimental Techniques. 22, 476 (1979).
8 Gavrilenko V.I. and Litovchenko V.G. Study of Defects in Ion Implanted Silicon Structures using Modulation Spectroscopy. Proc. Int. Conf. on “Ion Beam Modifications of Materials”. (IBMM), (Budapest, Hungary, 1978) p.1054.
7 Gavrilenko V.I., Zuev V.A., Kalandadze T.M., and Popov V.G. Correlation between Electro-optical and Electrical Parameters of the Epitaxial Silicon Films. Ukrainian Journal of Physics. 23, 854 (1978)
6 Gavrilenko V.I., Zuev V.A., Katrich G.A., and Tarashchenko D.T. Electroreflection of Hexagonal (6H) and Cubic Silicon Carbide Single Crystals. Soviet Physics - Semicond. 12, 959 (1978).
5 Almazov L.A., Gavrilenko V.I, Zuev V.A., and Litovchenko V.G. Electroreflection Spectra of Implantation-Doped Silicon. Soviet Physics - Semicond. 12, 913 (1978).
4 Gavrilenko V.I., Zuev V.A., and Litovchenko V.G. Electroreflection Investigation of Departures from Short-Range Order in Surface Layer in Silicon. Soviet Physics - Solid State. 19, 333 (1977).
3 Gavrilenko V.I., Ignatkov V.D., Kalandadze T.M., Litovchenko V.G., and Zuev V.A. Electroreflectance Spectra of Thin Silicon Films. Thin Solid Films 37, 201 (1976).
2 Gavrilenko V.I., Evstigneev A.M., Zuev V.A., Litovchenko V.G., Snitko O.V., and Tyagai V.A. Electroreflection Investigation of Characteristic of Energy Band Structure of a Transition Layer Near the Surface of Silicon. ?Soviet Physics - Semicond. 10, 640 (1976).
1 Gavrilenko V.I., Drazhan A.V., Zuev V.A., Korbutyak D.V., and Litovchenko V.G. Influence of Ion-Bombardment on Electroreflection and Photoluminescence Spectra of n-Type AlxGa1-xAs Solid Solutions ?Soviet Physics - Semicond. 10, 185 (1976).

Grants

Awards and Honors